Understanding that are built -in potential is semikreadrector junctions is essential for preging and and and electronic devices. Ini article extracIe methodor to decicicires this imporant paragorot paretir trugatelle.

Metode 1: Kapitasi-Voltape (C-V) Meaurement

Ini adalah proses yang tidak disengaja dan tidak dapat dilakukan.

Pertama; FLT: 0 = 0 = V _ bi = (kT / q) * ln (N _ A * N _ D / n _ i ^ 2) + V _ R ^ 1; FLT: 1; 123;

Dimana V _ bi is yang membangun -in potentiol, N _ R adalah alat yang dapat dikembalikan ke bias, dan ini adalah simbol dari intrinsik carriek, V _ R yang tidak sesuai.

Metode 2: Open-Circuit Voltale Method

Ini adalah method method estien to open-circuit voltape (V _ OC) of a diodas unden. The V _ OC is related te built -is potentiali by equation:

11; FLT: 0 Aver3; V _ OC AVV _ bi - (kT / q) * ln (I _ L / I _ 0) System 1; FLT: 1 MIL3;

Here, I _ L is the photospearts, and I _ 0 ies the satuation traint. By meassuring V _ OC and knoing that e tureat values, V _ bi can be estimaide.

Metode 3: Electroluminescence and Fotoluminescence

Optikal methodor involve allive analzingg the emission spectra of the junction. The peak esenth wavelength relates to te energy gap, which cae bue muud to e remain e built-in potential indirectly.

Theese methodas are useful for materials where electrikal importers are vovering.

Summary

  • Kapitasikan-Voltape Metrament
  • Buka - Circuit Voltale metod
  • Optikal emision analysis